Lateral device structures using self-aligned fabrication...

Details Lateral device structures using self-aligned fabrication... Lateral device structures using self-aligned fabrication...

H - Electricity

01

L

356/134

H01L 27/00 (2006.01) H01L 21/72 (1985.01)

Patent

CA 1191971

Lateral Device Structures Using Self-Aligned Fabrication Techniques Abstract Submicron lateral device structures, such as bipolar transistors, Schottky Barrier diodes and resistors, are made using self-aligned fabrication techniques and conventional photolithograph. The devices are made using individual submicron silicon protrusions which extend outwardly from and are integral with a silicon pedestal therefor. Both PNP and NPN transistors may be made by diffusing appro- priate dopant material into opposing vertical walls of a protrusion so as to form the emitter and collec- tor regions. The protrusions themselves are formed by anisotropically etching the silicon using sub- micron insulating studs as a mask. The studs are formed using sidewall technology where a vertical sidewall section of a layer of insulating material is residual to a reactive ion etching process employed to remove the layer of insulating material.

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