Lateral dmos transistor device having an injector region

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/149

H01L 29/78 (2006.01) H01L 29/739 (2006.01)

Patent

CA 1206627

9 Abstract: Lateral DMOS transistor device having an injector region. A lateral DMOS transistor includes a surface-adjoining injector region between the channel region and the drain region of the device. This injector region is connected to an external source of potential and serves to substantially decrease the on-resistance of the device by injecting minority carriers into the drift region when the device is in the "on" state. This improvement in on resistance is obtained without degrading the breakdown voltage characteristics of the transistor.

444070

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Lateral dmos transistor device having an injector region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral dmos transistor device having an injector region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral dmos transistor device having an injector region will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1168954

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.