Lateral dmos transistor devices suitable for source-...

Details Lateral dmos transistor devices suitable for source-... Lateral dmos transistor devices suitable for source-...

H - Electricity

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356/149

H01L 29/78 (2006.01) H01L 27/08 (2006.01) H01L 29/06 (2006.01) H01L 29/739 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1200620

13 Abstract: Lateral DMOS transistor devices suitable for source-follower appli- cations. A lateral DMOS transistor includes an intermediate semicon- ductor layer (16) of the same conductivity type as the channel region (20) which extends laterally from the channel region to beneath the drain contact region (24) of the device, This intermediate semiconduc tor layer (16) substantially improves the punchthrough and avalanche breakdown characteristics of the device, thus permitting operation in the source-follower mode, while also providing a compact structure which features a relatively low normalized "on" resistance.

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