Lateral insulated gate field effect transistor device

Details Lateral insulated gate field effect transistor device Lateral insulated gate field effect transistor device

H - Electricity

01

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356/149

H01L 29/76 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1165899

PHA 21035 13 ABSTRACT: A lateral, for example, double-diffused DMOS insulated gate field effect transistor includes a field- shaping semiconductor layer which serves to improve the breakdown voltage and/or series resistance characteristics of the device. The field-shaping layer redistributes the electrical field strength in the device during operation in order to eliminate too large an electrical field strength in portions of the device where breakdown would otherwise first occur. The field shaping layer may be a buried layer, a surface layer, or a combination of a buried layer and a surface layer.

379555

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