Lateral insulated gate transistors with coupled anode and...

Details Lateral insulated gate transistors with coupled anode and... Lateral insulated gate transistors with coupled anode and...

H - Electricity

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356/149

H01L 29/78 (2006.01) H01L 29/08 (2006.01) H01L 29/417 (2006.01) H01L 29/739 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1252225

ABSTRACT: A lateral insulated gate transistor includes both a surface-adjoining drain region (20) and a surface-adjoining anode region (21) in an epitaxial surface layer (12). An anode-drain electrode (28) is connected to the anode region (21) and coupled to the drain region (20). In one embodiment of the device, the drain and anode regions (20, 21) are in direct contact, and the anode-drain electrode (28) directly contacts both regions. In a second embodiment the anode region (21) is provided in a highly-doped surface-adjoining region (23) rather than in direct contact with the drain region (20), and the anode-drain electrode (28) is coupled to the drain region (20) through a resistive element (30). Lateral isolated gate transistors in accordance with the invention offer the advantages of low "on" resistance, high breakdown voltage and fast switching characteristics. Fig.2.

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