Lateral junction field effect transistor and method of...

Details Lateral junction field effect transistor and method of... Lateral junction field effect transistor and method of...

H - Electricity

01

L

H01L 21/337 (2006.01) H01L 29/808 (2006.01)

Patent

CA 2708358

A lateral junction field effect transistor includes a first gate electrode layer (18A) arranged in a third semiconductor layer (13) between source/drain region layers (6, 8), having a lower surface extending on the second semiconductor layer (12), and doped with p-type impurities more heavily than the second semiconductor layer (12), and a second gate electrode layer (18B) arranged in a fifth semiconductor layer (15) between the source/drain region layers (6, 8), having a lower surface extending on a fourth semiconductor layer (14), having substantially the same concentration of p-type impurities as the first gate electrode layer (18A), and having the same potential as the first gate electrode layer (18A). Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties

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