H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/128
H01L 29/76 (2006.01) H01L 21/74 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01) H01L 29/808 (2006.01)
Patent
CA 1193757
ABSTRACT: "Lateral junction field effect transistor device" A lateral junction field effect transistor device comprises a substrate (11) of a first conductivity type and a semiconductor layer (12) of the second conductivity type. Furthermore the device includes both a surface semiconductor layer (16/20) of the first conductivity type located between the gate and drain contact regions (17/19, 15/21) of the device and a buried semiconductor layer (13) of the second conductivity type which extends beneath at least the drain contact region (15/21) and the surface semi- conductor layer (16/20) of the device. The buried layer (13) may be in the form of a continuous layer extending beneath the gate, source, and drain contact regions of the device as well as the surface semiconductor layer, or it may be provided in annular form with an aperture beneath the source and gate regions (18, 17/19). The annular central buried layer configuration (13A) may further include an additional buried layer portion (13B) extending beneath the source region (18) of the device. Devices having buried and surface layers in accordance with the invention feature improved high- voltage breakdown characteristics, enhanced conductivity in the "on" state, and the ability to operate in the source-follower mode. Fig. 4.
418649
Koninklijke Philips Electronics N.v.
Van Steinburg C.e.
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