Lateral semiconductor device

Details Lateral semiconductor device Lateral semiconductor device

H - Electricity

01

L

356/92

H01L 29/72 (2006.01) H01L 21/00 (2006.01) H01L 21/033 (2006.01) H01L 21/8224 (2006.01) H01L 27/00 (2006.01) H01L 27/06 (2006.01) H01L 27/082 (2006.01)

Patent

CA 1059240

ABSTRACT: A semiconductor device having a bipolar transistor of the lateral type, preferably a pnp-transistor which is provided in a homogeneously doped semicon- ductor layer and which may be provided both in an n-type and in a p-type semiconductor layer and of which the base comprises a highly doped contact region and an associated substantially non-depleted active base region, while the emitter zone is situated substantially entirely within the active base region. Herewith, high frequency complementary transistors cnn be formed in a single epitaxial layer. The invention furthermore comprises a suitable method of manufacturing said transistor in which use is made of underetching. -35-

255479

Affiliated with

Also associated with

Rating

Lateral semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-899200