Lateral trench field-effect transistors in wide bandgap...

H - Electricity – 01 – L

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H01L 31/111 (2006.01) H01L 21/332 (2006.01)

Patent

CA 2589028

A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprise source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.

L'invention concerne un transistor à effet de champ à jonction. Ledit transistor est à base de matériau semi-conducteur à large bande interdite. Le dispositif comprend des couches à semi-conducteur source, canal, dérive et drain, ainsi que des régions à grille implantées de type p ou à grille Schottky. Les couches source, canal, dérive et drain peuvent être obtenues par croissance épitaxiale. Les contacts ohmiques avec les régions source, grille et drain peuvent se former sur le même côté de la plaquette. Les dispositifs peuvent avoir des tensions de seuil différentes en fonction de la largeur du canal vertical et peuvent être mis en oeuvre pour des modes aussi bien appauvrissement qu'enrichissement de fonctionnement pour le même dopage de canal. On peut utiliser ces dispositifs dans des circuits intégrés micro-ondes monolithiques, analogiques, numériques. L'invention concerne également des procédés de fabrication de ces transistors et des circuits intégrés comprenant ces dispositifs.

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