Layer of crystalline silicon having (iii) orientation on...

Details Layer of crystalline silicon having (iii) orientation on... Layer of crystalline silicon having (iii) orientation on...

C - Chemistry, Metallurgy

30

B

148/24

C30B 23/02 (2006.01)

Patent

CA 1133807

LAYER OF CRYSTALLINE SILICON HAVING (111) ORIENTATION ON (111) SURFACE OF LITHIUM ALUMINUM Abstract of the Disclosure Low strain heteroepitaxy of (111) silicon on (111) lithium aluminum between the reconstructed 7x7 surface of (111) silicon and a 6x6 array of aluminum atoms on the surface of the (111) lithium aluminum. The 7x7 recon- structed (111) silicon surface contains 36 silicon atoms and 13 vacancies for every 49 surface sites. The 36 silicon atoms on an area averaged basis match the 36 aluminum atoms in the 6x6 aluminum diamond structure (zero vacancies) present at the (111) surface of lithium aluminum to within about 1%.

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