Lift-off deposition system featuring a density optimized...

C - Chemistry – Metallurgy – 23 – C

Patent

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C23C 14/24 (2006.01)

Patent

CA 2757872

A vapor deposition device using a lift-off process includes an evapora-tion source, a space frame mounted for rota-tion about a first axis that passes through the evaporation source, a central dome-shaped wafer holder mounted to the space frame wherein a centerpoint of the central dome--shaped wafer holder is aligned with the first axis, a orbital dome-shaped wafer holder mounted to the space frame in a position offset from the first axis and rotatable about a second axis that passes through a center-point of the orbital dome-shaped wafer holder and the evaporation source, and a plurality of wafer positions on the central dome-shaped wafer holder and the orbital dome-shaped wafer holder where each of the wafer positions are offset from the first axis and the second axis. Each of the plural-ity of wafer positions are configured to ori-ent a substrate surface of a wafer mounted therein substantially orthogonal to a radial axis extending from the wafer position to the evaporation source during rotation about the first axis and the second axis.

L'invention porte sur un dispositif de dépôt par évaporation sous vide utilisant un processus de décollement qui comprend une source d'évaporation, un cadre spatial monté pour tourner autour d'un premier axe qui passe par la source d'évaporation, un porte-tranche en forme de dôme central monté sur le cadre spatial, un point central du porte-tranche en forme de dôme central étant aligné sur le premier axe, un porte-tranche en forme de dôme orbital monté sur le cadre spatial dans une position décalée du premier axe et pouvant tourner autour d'un second axe qui passe par le point central du porte-tranche en forme de dôme orbital et la source d'évaporation, et une pluralité de positions de tranche sur le porte-tranche en forme de dôme central et le porte-tranche en forme de dôme orbital, chacune des positions de tranche étant décalée du premier axe et du second axe. Chacune de la pluralité de positions de tranche est configurée pour orienter une surface de substrat d'une tranche montée dans celle-ci de façon sensiblement orthogonale à un axe radial s'étendant de la position de tranche à la source d'évaporation durant une rotation autour du premier axe et du second axe.

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