Light-activated p-i-n switch

Details Light-activated p-i-n switch Light-activated p-i-n switch

H - Electricity

01

L

356/161, 345/26,

H01L 31/16 (2006.01) H01L 31/0224 (2006.01) H01L 31/105 (2006.01) H03K 17/78 (2006.01)

Patent

CA 1157136

14 46,931 ABSTRACT OF THE DISCLOSURE A light-activated semiconductor switch includes a p-i-n rectifier. An emitter electrode disposed on the sur- face of the p region includes openings therein or a grid structure for allowing light to impinge on the p region. A collector electrode is disposed on the surface of the n region, which collector electrode may also include a grid structure for allowing light to impinge on the n region. The three regions of the switch hare a doping profile which is adapted to generate, even in conduction, an electric drift field within the semiconductor switch.

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