Light-activated semiconductor device

Details Light-activated semiconductor device Light-activated semiconductor device

H - Electricity

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H01L 31/10 (2006.01) H01L 21/225 (2006.01) H01L 21/263 (2006.01) H01L 29/36 (2006.01) H01L 29/74 (2006.01) H01L 31/111 (2006.01)

Patent

CA 1180796

Abstract of the Disclosure A light-activated semiconductor device comprising a semiconductor body constructed by laminating a plurality of semiconductor layers having alternately different conductivity types. A cathode electrode bearing a light-receiving penetrating hole is deposited on one side of the semiconductor body, and an anode electrode is laid on the opposite side of the semiconductor body. The semiconductor body is formed of a first region which is spread from the light-receiving penetrating hole to the opposite side of the semiconductor body, and in which a long carrier lifetime is assured, and the other second region than the first region in which the carrier lifetime is reduced.

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