Light beam director utilizing variation of beam intensity...

Details Light beam director utilizing variation of beam intensity... Light beam director utilizing variation of beam intensity...

G - Physics

02

F

345/56

G02F 1/01 (2006.01) G02F 1/017 (2006.01) G02F 1/35 (2006.01)

Patent

CA 1206575

- 15 - INTENSITY OF A LIGHT BEAM APPLIED TO A LAYERED SEMICONDUCTOR STRUCTURE CONTROLS THE BEAM Abstract An optical device includes a layered semiconductor structure having a variable input light beam applied to the structure with an E field component polarized normal to the layers. Intensity of the input light beam controls charge trapped in the layers, the dielectric constant of the layers containing the trapped charge, and the propagation of the input light beam within the device.

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