Light emissive semiconductor device

Details Light emissive semiconductor device Light emissive semiconductor device

H - Electricity

01

S

345/51

H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1042536

LIGHT EMISSIVE SEMICONDUCTOR DEVICE Abstract of the Disclosure A conventional construction of light emissive 3-5 semiconductor device is modified by the inclusion in the active region of the device of not more than 5 atomic percent of a group 3 or group 5 substituent of significantly different atomic radius than that of the element for which it is substituted. The microstress sealed in the neighbourhood of dislocation in the active region produces local modification of the concentration of the substituent causing a reduction in the magnitude of the microstress sealed associated with these dislocations.

236260

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