H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/20 (2010.01) H01L 33/32 (2010.01)
Patent
CA 2528751
A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type Al x Ga1-x N layer 3 on a first main surface side of the GaN substrate 1; a p-type Al x Ga1-x N layer 5 positioned further away from the GaN substrate 1 compared to the n-type Al x Ga1-x N layer 3; a multi-quantum well (MQW) 4 positioned between the n-type Al x Ga1-x N layer 3 and the p-type Al x Ga1-x N layer 5. In this light-emitting device, the p-type Al x Ga1-x N layer 5 side is down-mounted and light is emitted from the second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface. Hemispherical projections 82 are formed on the second main surface 1a of the GaN substrate 1.
Katayama Koji
Kitabayashi Hiroyuki
Nagai Youichi
Marks & Clerk
Sumitomo Electric Industries Ltd.
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