H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/50
H01L 33/00 (2006.01)
Patent
CA 1078949
LIGHT EMITTING DEVICES Abstract of the Disclosure A light emitting device has a III-V compound semi- conductor substrate whose bandgap is wider than the energy range corresponding to the radiation emitted by the device and which has a predetermined conductivity type. A second III-V compound semiconductor layer is deposited on an upper surface of the substrate and has the opposite conductivity type to that of the substrate. A current control layer covers an upper surface of the second layer and has a hole for current flow. A first electrode is provided on the current control layer and is in ohmic contact with the second III-V compound semiconductor layer. An ohmic contact electrode is provided on a bottom surface of the substrate and has a light extracting window at its central part. The current control layer is made of a layer of high carrier concentration having the opposite conductivity type to that of the second III-V compound semiconductor layer. The arrangement avoids a prior art difficulty in which the radiation region becomes extended by reason of the "current spreading phenomenon and becomes larger than the hole for current flow in the current control layer. Avoidance of this difficulty increases the efficiency of the device and especially enables efficient coupling with an optical fiber.
282548
Ito Kazuhiro
Kawata Masahiko
Kurata Kazuhiro
Mori Mitsuhiro
Morioka Makoto
Hitachi Ltd.
Na
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