Light emitting diode and method of making the same

Details Light emitting diode and method of making the same Light emitting diode and method of making the same

H - Electricity

01

L

345/50

H01L 33/00 (2006.01) G02B 6/42 (2006.01)

Patent

CA 1147050

ABSTRACT A light-emitting diode having a semiconductor active layer, a semiconductor first clad layer formed on a surface the semiconductor active layer, and a protrusion formed unitarily on a surface of the first clad layer, thereby to complete an input end of a light guide for light coupling therewith. A method of manufacturing this light emitting diode comprising the steps of forming a recess on one face of a semiconductor substrate, forming a semiconductor first clad layer on the abovementioned face of the semiconductor substrate, and selectively etching the substrate from the other face thereof so as to form a through-hole reaching the recess on the one face of the semiconductor substrate, thereby to expose at least a protrusion of the semiconductor first clad layer formed in the recess.

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