H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/00 (2006.01)
Patent
CA 2615134
A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of the stability layer. A thickness of the stability layer is chosen to maximizes a power of a light output by the nanocrystal complex layer. The matrix material and the stability layer can be of the same type of material. Additional layers of matrix material can be deposited on top of the nanocrystal complex layer. These additional layers can comprise matrix material only or can comprise matrix material and semiconductor nanocrystals to form another nanocrystal complex layer.
Diode électroluminescente (DEL) formée par dépôt d'une puce DEL et montage d'une couche de stabilité sur cette puce DEL. Des nanocristaux semi-conducteurs sont placés dans un premier matériau matriciel où ils forment une couche de complexe nanocristallin. Cette couche de complexe nanocristallin est déposée sur la couche de stabilité. L'épaisseur de la couche de stabilité est choisie dans le but de maximiser la puissance de l'émission lumineuse produite par la couche de complexe nanocrisallin. Ces couches supplémentaires peuvent contenir le matériau matriciel seul ou le matériau matriciel plus des nanocristaux semi-conducteurs et former alors une autre couche de complexe nanocristallin.
Evident Technologies Inc.
Gowling Lafleur Henderson Llp
LandOfFree
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