Light emitting diode having a p-n junction doped with one or...

Details Light emitting diode having a p-n junction doped with one or... Light emitting diode having a p-n junction doped with one or...

H - Electricity

01

L

H01L 33/02 (2010.01) H01L 33/32 (2010.01)

Patent

CA 2514561

A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a preferred embodiment, the LED has double heterojunction structure having a semiconductor active layer between two confinement layers. The semiconductor active layer includes activator ions preferably selected from among Eu3+, Tb3+, Dy3+, Pr3+, Tm3+, and Mn2+. The electron-hole pairs trapped within the active layer sensitize the activator ions, causing the activator ions to emit light.

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