Light-emitting diode with divided light-emitting region

H - Electricity – 01 – L

Patent

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H01L 33/00 (2006.01)

Patent

CA 2212624

A device for generating light with the aid of a semiconducting material consisting of two electrically conducting contact layers (1, 2) and at least one layer, arranged therebetween, of semiconducting material which comprises a light-emitting semiconducting layer (4) which is divided into at least two permanently parallel-connected sub-regions, delimited by semiconducting material (5) with a higher energy gap than the light-emitting layer or delimited by ion-implanted semiconducting material (6), wherein the delimiting material shall prevent the propagation of dislocations between the sub-regions.

L'invention concerne un dispositif pour générer de la lumière à l'aide d'un matériau semi-conducteur constitué de deux couches de contact conductrices d'électricité (1, 2) et d'au moins une couche disposée entre elles, constitutée d'un matériau semi-conducteur comprenant une couche semi-conductrice émettrice de lumière (4) divisée en au moins deux sous-régions connectées en parallèle de manière permanente et séparées par un matériau semi-conducteur (5) ayant une largeur de bande interdite plus large que la couche émettrice de lumière ou par un matériau semi-conducteur (6) implanté par des ions, le matériau de séparation empêchant la propagation de dislocations entre les sous-régions.

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