Light emitting semiconductor component

Details Light emitting semiconductor component Light emitting semiconductor component

H - Electricity

05

B

345/52

H05B 33/10 (2006.01) H05B 33/14 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1108740

ABSTRACT OF THE DISCLOSURE A light emitting semiconductor component in which a semiconductor substrate of a first conductivity type has a zone of a second conductivity type formed therein immediately below a portion of a planar surface thereof. An insulating layer covers the planar surface but has a window through the insulating layer above most of the zone of the second con- ductivity type. A layer of Zn2SiO4 doped with a luminous phospor lies on the planar substrate surface within this window without contact with the walls of the window opening. Three metal electrodes are formed, one on the portion of the Zn2SiO4 layer, one on the substrate surface above a marginal portion of the doped zone, and one on the substrate spaced from the doped zone. The Zn2SiO4 layer is preferably doped with Mn ions in a concentration of between 5?1016 and 5?1019 cm-3. The depth of the zone is less than 1000 nm. One preferred doping for the zone of the second conductivity type is a doping of boron in a concentration of between 5?1018 and 5?1019 ions cm-3. A process for the production of the com- ponent is disclosed, and a process for the operation of the component is disclosed.

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