Light emitting semiconductor device

Details Light emitting semiconductor device Light emitting semiconductor device

H - Electricity

01

L

345/50

H01L 33/00 (2006.01)

Patent

CA 1108739

LIGHT EMITTING SEMICONDUCTOR DEVICE Abstract of the Disclosure A light emitting semiconductor device has a p-n junction made up of semiconductor layers of first and second conductivity types. A low-resistance semiconductor layer adjoins the first conductivity type semiconductor layer and contains large quantities of impurity of the first con- ductivity type. A semiconductor layer for light emission adjoins the low-resistance semiconductor layer and has the first conductivity type. A ditch extends from a surface of the second conductivity type semiconductor layer to surround the p-n junction. The distance between the bottom of the ditch and the low-resistance semiconductor layer is no more than a half of the width of the ditch. The arrangement has the merit that the near field pattern of light emission is much more uniform than in prior-art devices.

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