Light emitting semiconductor device

Details Light emitting semiconductor device Light emitting semiconductor device

H - Electricity

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345/50

H01L 33/00 (2006.01) H01S 5/062 (2006.01) H01S 5/223 (2006.01) H01S 5/32 (2006.01) H01S 5/34 (2006.01)

Patent

CA 1292549

A LIGHT EMITTING SEMICONDUCTOR DEVICE Abstract of the Disclosure The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emitter region and base region so as to apply a constant voltage therebetween, while a control voltage source is connected across the emitter region and the collector region so as to selectively apply a reverse bias to a base-collector junction for controlling recombination of carriers injected to the base region. The control voltage source produce such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.

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