H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/50
H01L 33/00 (2006.01) H01L 21/60 (2006.01)
Patent
CA 1112749
ABSTRACT OF THE DISCLOSURE A light-emitting semiconductor device of the type having a substrate, a first layer of a semiconductor on the substrate and a second layer of a different con- ductivity on the first layer. The second layer is selectively voided so as to give a recess and leave the first layer uncovered in a region serving as the bottom of the recess. An ohmic electrode layer is selectively formed on the second layer so as to extend into the recess and contact with the uncovered region of the first layer, and another ohmic electrode layer is selectively formed on the second layer so as to be separated from the former electrode layer. A solder bump is built up on the first electrode layer to fill up the recess and another solder bump on the second electrode layer so as to be separated from the former solder bump. Selective voiding of the second layer is accomplished by initially covering the entire area of the first layer with the second layer and then selec- tively slotting the second layer to a depth greater than the thickness of the second layer.
305606
Hashimoto Masafumi
Kobayasi Hiroyuki
Matsushita Electric Industrial Co. Ltd.
Robic Robic & Associes/associates
LandOfFree
Light-emitting semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light-emitting semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting semiconductor device and method of... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-848168