C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 31/20 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2054242
There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (AlxGa1-xN, where 0?x<1) comprises an n-layer; a p-layer which exhibits p-type conduction upon doping with p-type impurities and irradiation with electron rays, the p-layer joining to the n-layer; a first electrode for the n-layer so as to join to the n-layer, passing through a hole formed in the p-layer which extends from the p-layer to the n- layer; and a second electrode for the p-layer which is formed in a region which is separated by a groove formed in the p-layer so as to extend from the upper surface of the p-layer to said n-layer. An LED comprises an n- layer; an i-layer doped with p-type impurities, the i- layer joining to the n-layer; a first electrode for said n-layer so as to join to the n-layer, passing through a hole formed in the i-layer which extends from the upper surface of the i-layer to the n-layer; a p-type part in a specific region in the i-layer which is converted into p-type conduction by irradiating with electron rays, the p-type part being formed such that said first electrode is insulated and separated by the i-layer; and a second electrode for said p-type part.
Akasaki Isamu
Amano Hiroshi
Kotaki Masahiro
Nagoya University
Research Development Corporation Of Japan
Smart & Biggar
Toyoda Gosei Co. Ltd.
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