H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/50
H01L 33/00 (2006.01)
Patent
CA 2037198
Disclosed herein is a light-emitting semiconductor device that includes a gallium nitride compound semiconductor (AlxGa1-xN) comprising an n-layer and an i-layer, at least one of them being of a double layer structure. In one embodiment the n-layer has a double-layer structure including an n-layer of a low carrier concentration and an n+-layer of a high carrier concentration, the former being adjacent to the i-layer. In another embodiment, the i-layer has a double-layer structure including an iL-layer of a low impurity concentration containing p-type impurities in a comparatively low concentration and an iH-layer of a high impurity concentration containing p-type impurities in a comparatively high concentration, the former being adjacent to the n-layer. In still another embodiment, both of the n-layer and the i-layer have a double layer structure. Also disclosed is a method for producing the light-emitting semiconductor device which employs a vapor phase epitaxy. In one preferred method, an n-type gallium nitride compound semiconductor (AlxGA1-xN) having a controlled conductivity is produced from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas together with other raw material gases at a controlled mixing ratio.
Akasaki Isamu
Hashimoto Masafumi
Kato Hisaki
Koide Norikatsu
Mabuchi Akira
Kabushiki Kaisha Toyota Chuo Kenkyusho
Nagoya University
Research Development Corporation Of Japan
Smart & Biggar
Toyoda Gosei Co. Ltd.
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