Light-emitting thyristor and self-scanning light-emitting...

Details Light-emitting thyristor and self-scanning light-emitting... Light-emitting thyristor and self-scanning light-emitting...

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2348632

A pnpn structure light-emitting thyristor with high light emission efficiency in which p-type and n-type AlGaAs layers are alternated on a GaAs buffer layer on a GaAs substrate, characterized in that the content of Al in the AlGaAs layer directly on the GaAs buffer layer stepwise or continuously increases.

L'invention concerne un thyristor électroluminescente de structure pnpn, à capacité d'émission de lumière élevée, dans lequel les couches AlGaAs de type n et de type p sont alternées sur une couche intermédiaire GaAs sur un subtrat GaAs, la teneur en Al dans la couche AlGaAs prévue directement sur la couche intermédiaire GaAs augmente progressivement ou en continu.

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