H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/06 (2006.01) H01L 31/0352 (2006.01) H01L 31/105 (2006.01)
Patent
CA 2058035
Abstract of the Disclosure A light absorbing layer, and a window layer formed thereon constitutes a first conduction-type semiconductor layer. In a part of this first conduction-type semiconductor layer there is provided a second conduction-type region extending to the light absorbing layer through the window layer. A part of the window layer around the second conduction region is selectively removed. Consequently even when light intended to enter a light detecting region is incident outside of the light detecting region, most of the carriers generated there are recombined at a surface level of the light absorbing layer before diffusing in a depletion laser. Resultantly this light detecting device does not substantially detection sensitivity to light incident outside the light detecting region.
Fujimura Yasushi
Okuda Hiroshi
Tonai Ichiro
Fujimura Yasushi
Marks & Clerk
Okuda Hiroshi
Sumitomo Electric Industries Ltd.
Tonai Ichiro
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