H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32
H01S 5/22 (2006.01) H01S 5/20 (2006.01) H01S 5/042 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1177149
ABSTRACT OF THE DISCLOSURE Light source with a semiconductor junction comprising a substrate on which are successively deposited a first and second semiconductor layer having opposite doping and a device for injecting charge carriers from a power supply, wherein said device com- prises a highly doped contact layer partly covered by an alloyed metal layer forming an ohmic contact and a metal layer covering the alloyed layer, together with the remainder of the second semiconductor layer, said metal layer being connected to the power supply and wherein the semiconductor constituting the second layer is chosen from among those which form a Schottky diode in contact with a metal like that of the metal layer, said diode being reverse polarized under the normal operating conditions of the source, the zone in which charge injection takes place consequently being limited to a single ohmic contact zone, excluding the zones in which there is a Schottky diode. The invention also relates to a process for producing such a light source in which the double heterostructure is obtained by successive deposits of semiconductor layers by liquid phase epitaxy onto mono- crystalline substrate.
382143
Bouley Jean-Claude
Chaminant Guy
Charil Josette
Bouley Jean-Claude
Chaminant Guy
Charil Josette
Goudreau Gage Dubuc
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