H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/0224 (2006.01) C03C 17/245 (2006.01) C23C 14/00 (2006.01) C23C 14/08 (2006.01) C23C 14/34 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2104770
2104770 9217620 PCTABS00016 Indium tin oxide is doped with a fluorine containing gas and a stabilizing gas such as H2 and H2O. The oxide is formed by sputtering a light transmissive, electrically conductive oxide precursor onto a substrate at a temperature from 20 ·C to 300 ·C. Sputtering occurs in a gaseous mixture including a sputtering gas, the fluorine containing gas, and the stabilizing gas.
Gilbert James R.
Tran Nang T.
Minnesota Mining And Manufacturing Company
Smart & Biggar
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