H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/121
H01L 27/01 (2006.01) H01L 27/08 (2006.01) H01L 29/8605 (2006.01) H03M 1/00 (2006.01)
Patent
CA 1122721
LINEAR SEMICONDUCTOR RESISTOR ABSTRACT OF THE DISCLOSURE A diffused semiconductor resistance structure having a resistance value that is practically indepen- dent of applied voltage. The novel structure of the invention, as it relates to the illustrative embodi- ment, includes an isolation layer diffused into an underlying substrate, a resistance layer diffused into the isolation layer, and a conductive element connect- ing the isolation layer to an electrical contact near the mid-point of the resistance layer. The junction between the resistance layer and the isolation layer is thereby zero-biased at its midpoint, is forward-biased on one side of the midpoint, and is reverse-biased on the other side of the midpoint. Consequently, the average thickness of a depletion region formed at the junction, and the average effective depth of the resistance layer, are maintained constant and practi- cally independent of applied voltage, to provide a resistance value that is also practically constant.
347882
Gowling Lafleur Henderson Llp
Trw Inc.
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