G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/40 (2006.01) G11C 16/00 (2006.01) G11C 27/00 (2006.01)
Patent
CA 2205720
A linearized storage cell in which in the read mode, the cell is used in the linear region in a negative feedback mode, resulting in a linear variation of cell current with the threshold of the cell. By imposing the cell current across an equivalent active MOS resistor, a cell read-out voltage linearly dependent on the cell threshold voltage is achieved. Alternate embodiments are disclosed. Details of the method are disclosed.
Cellule mémoire linéarisée qui, en mode lecture, est utilisée dans la zone linéaire en mode réaction négative, ce qui fait varier linéairement le courant de cellule en fonction du seuil de la cellule. En appliquant le courant de cellule à travers une résistance MOS active équivalente, on obtient une tension de lecture de cellule linéairement dépendante de la tension de seuil de cellule. D'autres versions sont présentées. Les détails de la méthode sont exposés.
Information Storage Devices Inc
Riches Mckenzie & Herbert Llp
LandOfFree
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