G - Physics – 11 – B
Patent
G - Physics
11
B
328/173, 375/39,
G11B 27/00 (2006.01) G11C 11/24 (2006.01) G11C 16/02 (2006.01) H01L 27/102 (2006.01) H01L 27/24 (2006.01)
Patent
CA 1245766
RANDOM ACCESS MEMORY ABSTRACT OF THE DISCLOSURE A dynamic memory array includes plural sets of spaced apart address lines and storage loca- tions defined by crossovers of members of the plural sets of address lines. At each storage lo- cation a charge storage means is coupled to a threshold means. The charge storage means are ad- dressable through the threshold means by the ap- plication of selected potentials to the plural sets of address lines. The charge storage means and the threshold means can be formed as vertical- ly arrayed, deposited, layers of semiconductor ma- terials, and preferably from amorphous semiconduc- tor alloys. Also disclosed is a light influencing display having an improved bidirectional threshold isolation means. -1-
501431
Cannella Vincent D.
Chapelle Walter E.
Pryor Roger W.
Yaniv Zvi
Energy Conversion Devices Inc.
Macrae & Co.
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