H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/00 (2006.01) H01G 9/20 (2006.01)
Patent
CA 1237510
ABSTRACT An amorphous silicon semiconductor alloy hav- ing multiple layers is used to form a photoelec- trode (either a photoanode or a photocathode) for use in a photoelectrochemical cell for the photo- electrolysis of water to produce hydrogen or the conversion of solar energy into electrical ener- gy. Each layer of the semiconductor alloy has a different dopant concentration ranging from no dopant to a heavy dopant concentration. The pho- toelectrochemical cell can utilize a photocathode and a conventional metal anode, a photoanode or both a photocathode and a photoanode according to the present invention. The semiconductor alloy of the photoelectrode is a-Si:F:H or a-Si:Hx de- posited on a reflective layer of aluminum of mo- lybdenum which is deposited on a substrate of glass or stainless steel. A tunnelable oxide layer can be deposited or intrinsically formed to cover and protect the top surface of the semicon- ductor alloy body. The photoanode is of an n-type configuration while the photocathodes can be either a p-type or a P-I-N type configuration.
447743
Liang Gao
Pinsky Naum
Reichman Benjamin
Sapru Krishna
Energy Conversion Devices Inc.
Macrae & Co.
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