Liquid phase epitaxial growth

C - Chemistry – Metallurgy – 30 – B

Patent

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148/2.55

C30B 15/02 (2006.01) C30B 19/06 (2006.01) H01L 21/208 (2006.01)

Patent

CA 1051325

TITLE OF THE INVENTION Liquid phase epitaxial growth. ABSTRACT OF THE DISCLOSURE Apparatus for and methods of forming a liquid phase epitaxial growth layer on 3 semiconductor wafer by floating the wafer on a solution which forms the source of the epitaxial growth layer.

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