C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.55
C30B 15/02 (2006.01) C30B 19/06 (2006.01) H01L 21/208 (2006.01)
Patent
CA 1051325
TITLE OF THE INVENTION Liquid phase epitaxial growth. ABSTRACT OF THE DISCLOSURE Apparatus for and methods of forming a liquid phase epitaxial growth layer on 3 semiconductor wafer by floating the wafer on a solution which forms the source of the epitaxial growth layer.
220998
Isawa Nobuyuki
Tanabe Kazuya
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