Liquid phase epitaxial growth method

Details Liquid phase epitaxial growth method Liquid phase epitaxial growth method

C - Chemistry, Metallurgy

30

B

356/178

C30B 19/12 (2006.01) C30B 19/04 (2006.01) C30B 29/40 (2006.01) H01L 21/02 (2006.01)

Patent

CA 1204526

LIQUID PHASE EPITAXIAL GROWTH METHOD ABSTRACT OF THE DISCLOSURE In liquid phase epitaxial growth of a compound semiconductor layer on a substrate, an unsaturated solution is brought into contact with a solute source crystalline plate. The plate dissolves into the solution, which creates a supercooling condition in the solution without decrease of the solution temperature. The crystalline plate has a denser crystal face than that of the substrate, and/or the lattice constant of the crystalline plate is considerably different from that of the substrate.

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