Liquid phase epitaxy method and apparatus

Details Liquid phase epitaxy method and apparatus Liquid phase epitaxy method and apparatus

C - Chemistry, Metallurgy

30

B

345/33, 148/2.55

C30B 23/00 (2006.01)

Patent

CA 1071069

Abstract of the Disclosure The present invention relates to a liquid phase epitaxy method of fabricating on a substrate a layer having a taper adjacent a zone of uniform thickness. The method comprises the steps of positioning a mask in closely spaced relation over a portion of the substrate and bringing a saturated source solution into contact with the substrate while maintaining a controlled cooling program for a time period which is effective to grow the layer to the desired thickness. The taper is formed adjacent the edges of the mask.

305707

Affiliated with

Also associated with

Rating

Liquid phase epitaxy method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid phase epitaxy method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid phase epitaxy method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1083469