Liquid phase epitaxy technique for reducing edge growth

Details Liquid phase epitaxy technique for reducing edge growth Liquid phase epitaxy technique for reducing edge growth

C - Chemistry, Metallurgy

30

B

148/2.55

C30B 15/02 (2006.01) C30B 19/10 (2006.01) H01L 21/208 (2006.01)

Patent

CA 1055367

LPE TECHNIQUE FOR REDUCING EDGE GROWTH Abstract of the Disclosure Described is a liquid phase epitaxy technique using conventional slider apparatus in which, after heating the source solution to saturation, the solution temperature is rapidly reduced so that supersaturation takes place but heterogeneous nucleation does not. The solution is allowed to reach convective equilibrium and only then is brought into contact with the substrate. Once in contact, the temperature is maintained constant so that convention currents in the solution are substantially reduced. This technique has several advantages: reduced edge growth, increased usable wafer area, and reduced wipe-off problems. - 1 -

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