Lithographic resist composition including a phenol-aldehyde...

Details Lithographic resist composition including a phenol-aldehyde... Lithographic resist composition including a phenol-aldehyde...

G - Physics

03

C

96/167, 96/176

G03C 1/52 (2006.01) G03C 1/72 (2006.01) G03F 7/016 (2006.01) G03F 7/022 (2006.01)

Patent

CA 1122467

Abstract of the Disclosure Lithographic resist compositions are provided which permit an improved lift-off process in which the depo- sition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: Image wherein R1 is C1 to C20 alkyl or aryl, R2 is H, C1 to C20 alkyl or aryl, or together R1 and R2 are cycloalkyl, A is N or H.

361713

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