G - Physics – 03 – F
Patent
G - Physics
03
F
327/1.4
G03F 7/00 (2006.01) G03F 7/004 (2006.01) G03F 7/20 (2006.01) H01F 41/14 (2006.01) H01F 41/34 (2006.01)
Patent
CA 1279104
ABSTRACT OF THE DISCLOSURE A microlithographic process of fabricating electronic components, such as, for example, integrated circuit chips and thin film read/write heads for computer disk systems, in which a laser is used to etch features defined by a mask. The laser is selected whose radiation will be absorbed by the workpiece being etched, and the masking material is selected so as to be highly reflective of the laser radia- tion. The masking material is patterned in a conventional manner so as to expose the portions of the workpiece material to be etched. When the laser is directed to the workpiece, the laser radiation etches the portions of the workpiece not protected by the mask. The depth of the recess formed by the laser can be limited by depositing an etch stop layer of reflective material on a substrate, followed by an intermediate layer of workpiece material to be etched, and then the reflective mask. The laser radiation etches the intermediate layer through the mask to the etch stop layer, which prevents radiation from etching the workpiece further. Depending on the material being etched, the etch may be improved if performed under a liquid transparent to the laser radiation. The liquid may carry away the products produced by the etch.
543954
Das Shyam C.
Quantum Corporation
Smart & Biggar
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