Lnversion-mode insulated-gate gallium arsenide field effect...

Details Lnversion-mode insulated-gate gallium arsenide field effect... Lnversion-mode insulated-gate gallium arsenide field effect...

H - Electricity

01

L

356/126

H01L 27/02 (2006.01)

Patent

CA 1223672

INVERSION-MODE INSULATED-GATE GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS ABSTRACT OF THE DISCLOSURE Inversion-mode insulated-gate field-effect transistor structures axe provided wherein a lightly- doped GaAs drift or drain region is combined with a gate-controlled channel structure comprising a film or layer of a semiconductor layer other than GaAs and within which inversion regions may more readily be formed. Suitable semiconductor materials for the gate-controlled channel structure are InP and GaxIn1-xAs. Presently preferred is a GaxIn1-xAs graded layer wherein x ranges from 1.0 to about 0.47.

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