Localized annealing of metal-silicon carbide ohmic contacts...

Details Localized annealing of metal-silicon carbide ohmic contacts... Localized annealing of metal-silicon carbide ohmic contacts...

H - Electricity

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H01L 21/28 (2006.01) H01L 21/263 (2006.01) H01L 21/268 (2006.01) H01L 21/60 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2535723

A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat.

L'invention consiste à former un contact pour un dispositif à semi-conducteurs. A cet effet, il convient de former un métal sur un substrat de carbure de silicium (SiC) ; de procéder à un traitement de recuit d'un emplacement d'interface du métal et du substrat SiC de manière à former un matériau métal-SiC au niveau de cet emplacement ; et de ne pas procéder au traitement de recuit d'un emplacement sur le substrat Sic de manière à ne pas former de matériau métal-SiC au niveau de cet emplacement.

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