Low charging dielectric for capacitive mems devices and...

Details Low charging dielectric for capacitive mems devices and... Low charging dielectric for capacitive mems devices and...

H - Electricity

01

H

H01H 1/00 (2006.01)

Patent

CA 2592507

An improved dielectric suitable for use in electronic and micro-electro- mechanical (MEMS) components. The dielectric includes silicon nitride having a percentage of Si:H bonds greater than a percentage of N:H bonds, in order to reduce the level of charge trapping of the silicon nitride.

L~invention concerne un diélectrique amélioré approprié pour être utilisé dans des composants électroniques et micro-électromécaniques (MEMS). Le diélectrique comprend du nitrure de silicium dans lequel le pourcentage de liaisons Si:H est supérieur à un pourcentage de liaisons N:H, afin de réduire le niveau de piégeage de charges dans le nitrure de silicium.

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