Low density high surface area copper powder and...

C - Chemistry – Metallurgy – 25 – C

Patent

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C25C 5/02 (2006.01) B22F 1/00 (2006.01) C22C 1/04 (2006.01)

Patent

CA 2317573

This invention relates to a low density high surface area copper powder having an apparent density in the range of about 0.20 to about 0.60 gram per cubic centimeter, and a surface area of at least about 0.5 square meter per gram. This invention also relates to an electrodeposition process for making the foregoing copper powder by electrodepositing the copper powder from an electrolyte solution using a critical combination of process parameters. These critical parameters include: a copper ion concentration for the electrolyte solution in the range of about 2 to about 7 grams per liter; a free chloride ion concentration for the electrolyte solution in the range of about 8 to about 20 ppm; an impurity level for the electrolyte solution of no more than about 1.0 gram per liter; and an electrolyte solution that is free of organic additives.

Cette invention concerne une poudre de cuivre à faible densité et grande aire de surface présentant une masse volumique non tassée comprise entre environ 0,20 et environ 0,60 g/cm?3¿, et une aire de surface d'au moins environ 0,5 m?2¿/g. Cette invention concerne également un procédé de dépôt électrolytique de production de la poudre de cuivre précitée par dépôt électrolytique de ladite poudre de cuivre à partir d'une solution électrolytique utilisant une combinaison critique de paramètres de traitement. Ces paramètres critiques comprennent: la concentration en ions cuivre de la solution électrolytique dans la plage allant d'environ 2 à environ 7 g/l, la concentration en ions chlorure libres de la solution électrolytique dans la plage comprise entre environ 8 et environ 20 ppm, le niveau d'impuretés de la solution électrolytique non supérieur à environ 1,0 g/l et une solution électrolytique exempte d'additifs organiques.

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