Low dielectric composite substrate

H - Electricity – 01 – L

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H01L 23/14 (2006.01) C04B 41/48 (2006.01) C04B 41/49 (2006.01) H01L 21/48 (2006.01) H01L 23/538 (2006.01) H05K 3/40 (2006.01) H05K 1/03 (2006.01)

Patent

CA 1308817

ABSTRACT The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Further- more, a permeable, skeletal dielectric can be fabri- cated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength. FI9-86-046

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