Low dielectric loss silicon nitride based material

Details Low dielectric loss silicon nitride based material Low dielectric loss silicon nitride based material

H - Electricity

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H01B 3/12 (2006.01) C04B 35/58 (2006.01) C04B 35/584 (2006.01) H01Q 1/42 (2006.01)

Patent

CA 1273193

ABSTRACT A composition having a low dielectric constant and low dielectric loss tangent from room temperature to at least about 1100°C which comprises a silicon nitride based material containing an effective amount of a sintering aid selected from lanthanum oxide, yttrium oxide, lanthanum aluminate, yuttrium aluminate, aluminmum oxide and mixtures thereof and an effective amount of a low dielectric loss promotor selected from the group consisting of iron, chromium and mixtures thereof is a suitable radome material and electromagnetic window material.

506031

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