Low frequency power amplifier using mos fet's

Details Low frequency power amplifier using mos fet's Low frequency power amplifier using mos fet's

H - Electricity

03

F

330/16, 330/41

H03F 3/21 (2006.01) H01L 23/045 (2006.01) H01L 23/36 (2006.01) H01L 23/64 (2006.01) H03F 3/16 (2006.01) H03F 3/30 (2006.01)

Patent

CA 1109531

LOW FREQUENCY POWER AMPLIFIER USING MOS FET'S ABSTRACT OF THE DISCLOSURE A low frequency power amplifier uses MOS FET's each having a semiconductor device unit including a source electrode, a drain electrode and an insulated gate electrode filled in a can type casing with the source electrode being electrically connected to the can type casing. When the MOS FET having its source electrode connected to the can type casing is mounted on a heat sink and operated in a source follower con- figuration, a stray capacity between the can-shaped casing and the heat sink is connected in parallel with a load so that the amplifier oscillates. The heat sink is grounded through an impedance element and the stray capacity is isolated from the load to prevent the ocsillation.

301022

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