Low-leakage jfet

Details Low-leakage jfet Low-leakage jfet

H - Electricity

01

L

356/149

H01L 29/80 (2006.01) H01L 29/08 (2006.01) H01L 29/10 (2006.01) H01L 29/45 (2006.01) H01L 29/808 (2006.01)

Patent

CA 1233913

ABSTRACT OF THE DISCLOSURE A low-leakage-current JFET having electrically isolated top and bottom gates. The structure employs enclosed geometry wherein one source/drain region fully surrounds the other source/drain region. Connection to the top gate is made through a diffusion-barrier to pre- vent penetration of metallization into the top gate con- tact region. A non-penetrating contact layer is provided on the upper surface of the top gate so that the material of the contact layer does not enter the top gate region to any significant extent. Both the channel region and the shield layer are formed by ion-implantation.

492282

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