Low melting temperature glass for use over aluminium...

Details Low melting temperature glass for use over aluminium... Low melting temperature glass for use over aluminium...

H - Electricity

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H01B 3/08 (2006.01) C03C 3/062 (2006.01) C03C 3/097 (2006.01) C03C 4/16 (2006.01) H01L 21/316 (2006.01) H01L 23/29 (2006.01) H01L 23/532 (2006.01) H05K 1/03 (2006.01) H05K 3/28 (2006.01)

Patent

CA 1200971

ABSTRACT A low temperature insulation glass for use in semiconductor devices comprises a mixture of germanium, silicon, oxygen and phosphorus. In the preferred embodiment, the glass comprises a mixture of about 45% to 50% silicon dioxide (SiO2), about 50% to 45% of germanium dioxide (GeO2) and about 5% of phosphorus pentoxide (P2O5), by weight.

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